The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 1984
Filed:
Jun. 02, 1982
Frank Z Hawrylo, Trenton, NJ (US);
Abstract
A multiple double heterojunction buried laser device is formed of a bulk structure, a plurality of double heterojunction buried lasers and electrical means. The bulk structure includes, in order, an InP:Sn substrate, an InP:Te first layer, an InP:Zn second layer, an InP:Te third layer, and a capping n-type fourth layer. Multiple stripe-like openings are formed in the above layers and double heterojunction buried lasers are formed therein. The double heterojunction buried lasers include the following layers in order: an InP:Te heterojunction first layer, an InGaAsP quarternary second layer, an InP:Zn heterojunction third layer, and an InGaAsP:Zn capping fourth layer. A reverse biased junction is formed in said bulk structure so that current is confined to the lasers; the active lasing regions are above the p-type layers of the p-n reversed bias junction. The double heterojunction buried lasers can be cleaved from the laser device and operated as a single device.