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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 4484211 B1

PDFFull Text
Date of Patent:
Nov. 20, 1984

Filed:

Oct. 17, 1983

Oxide walled emitter

Applicant:
Inventors:

Toyoki Takemoto, Kyoto, JP;

Tsutomu Fujita, Osaka, JP;

Hiroyuki Sakai, Osaka, JP;

Haruyasu Yamada, Osaka, JP;

Assignee:

Matsushita Electric Industrial Co., Ltd., Osaka, JP;

Attorney:

Burgess, Ryan and Wayne

Primary Examiner:

William D Larkins

Assistant Examiner:

Charles S Small, Jr

Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 50 ; 357 34 ; 357 55 ; 357 59 ; 357 20 ;
Abstract

A semiconductor integrated circuit device in which the side surfaces of an emitter of an oxide isolated bipolar transistor are surrounded with insulating compounds or regions so that the capacitance between the emitter and base is lowered and a base is formed by the self-alignment so that the influence of an active base between an external base and the emitter can be made negligible. Thus the base resistance and parasitic capacitance are lowered.

Find Patent Forward Citations

Takemoto, Toyoki. (1984). Oxide walled emitter (U.S. Patent No. 4484211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4484211

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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