The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 1984
Filed:
Oct. 11, 1983
Applicant:
Inventor:
Jacques Thire, Caen, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 13 ; 357 20 ;
Abstract
The channel region and gate region of a junction-type field-effect transistor have substantially the same outline and can be produced by successive implantation through the same mask. A highly doped contact zone ensures an ohmic connection between this gate region and the other portion of the gate formed by the part of the layer situated below the channel region. Such a transistor may have a low threshold voltage while being comparatively easy to manufacture, for example, in an integrated circuit with bipolar transistors. The contact zone may be formed simultaneously with a bipolar transistor emitter zone.