The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 1984
Filed:
Jan. 31, 1983
Thomas D Mantei, Cincinnati, OH (US);
University of Cincinnati, Cincinnati, OH (US);
Abstract
A method and apparatus for plasma etching a substrate, such as a semiconductor wafer, utilizing a multipole surface magnetic field confining within an etching chamber an etching plasma of substantially uniform density throughout its volume. The plasma is produced and maintained by subjecting a gas such as CF.sub.4 to an ionizing discharge within the chamber. Only DC power sources are used for the discharge, so that there is virtually no perturbing radio frequency interference produced. The wafer is consequently easily biased relative to the plasma for controlled fine-scale etching. Low gas pressures permitted by the surface magnetic field result in substantially anisotropic etching of the substrate by dense plasma concentrations.