The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 1984
Filed:
Apr. 15, 1983
Tatsumi Hiramoto, Himeji, JP;
Ushio Denki Kabushikikaisha, Tokyo, JP;
Abstract
An annealing method wherein an elongated irradiation area is formed by a light source whose emitted light is controlled so that a peak curve of the illuminance distribution in the area may be substantially linear and that equiluminous curves near the peak curve may be substantially parallel therewith. A semiconductor wafer and the irradiation area are moved relative to each other in such a manner that the entire area of the semiconductor wafer to be annealed may cross all the equiluminous curves, thereby to achieving the annealing of the semiconductor wafer. With this annealing method, semiconductor crystals are satisfactorily recovered from damages incidental to ion implantation into the semiconductor wafer and polycrystalline or amorphous semiconductors are converted into single crystal semiconductors of good quality.