The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 13, 1984
Filed:
Sep. 08, 1982
Applicant:
Inventor:
Rudolf A Heinecke, Harlow, GB;
Assignee:
ITT Industries, Inc., New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 357 65 ; 357 91 ;
Abstract
Aluminum metallization layers on a semiconductor substrate are alloyed with a predetermined quantity of silicon by implanting silicon ions into the metallization layer. The layer is heated during subsequent processing to a temperature of 300.degree. to 500.degree. C. at which simultaneous annealing and diffusion take place to form the alloy. An apparatus for performing the process comprises a vacuum chamber wherein implantation is effected, an ion gun and means including a deflection magnet slit for selecting a single ionic species for implantation.