The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 13, 1984

Filed:

Dec. 15, 1980
Applicant:
Inventors:

Kazuo Nishiyama, Kanagawa, JP;

Tetsunosuke Yanada, Tokyo, JP;

Michio Arai, Kanagawa, JP;

Assignee:

Sony Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 2957 / ; 2957 / ; 148187 ; 357 91 ;
Abstract

A process of manufacturing a semiconductor device having the steps of implanting impurity ions to a surface of a semiconductor substrate; and radiating the substrate with incoherent light of which scope is wider than said substrate whereby the implanted region is electrically activated.


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