Method of depositing a semiconductor layer from a glow discharge

Abstract

An improved method for the deposition of a semiconductor layer from the positive column of a glow discharge is disclosed. The improvement comprises dividing an electrically conducting layer on a surface of an insulator into a plurality of electrically isolated segments. The width of each segment is preferably less than or equal to the maximum allowable difference in the relative plasma potential over the conducting substrate divided by the plasma potential gradient. Data for amorphous silicon photovoltaic devices are also disclosed which show a greatly improved uniformity in V.sub.oc and J.sub.sc with relative position in the positive column for segmented as compared to unsegmented devices.