The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 06, 1984

Filed:

Jul. 06, 1982
Applicant:
Inventors:

Jean C Dubois, Paris, FR;

Maryse Gazard, Paris, FR;

Francois Schue, Paris, FR;

Louis Giral, Paris, FR;

Michel Rolland, Paris, FR;

Mahmoud Aldissi, Paris, FR;

Assignee:

Thomson-CSF, Paris, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B / ;
U.S. Cl.
CPC ...
252519 ; 252520 ; 252521 ; 524403 ; 524435 ; 524406 ; 524413 ; 528485 ; 528490 ;
Abstract

The invention relates to a doped polyacetylene film for forming an organic semiconductor or even a conductor of a metallic type. It serves to make the doping more homogeneous and improves the stability over a period of time. The process consists of using as the dopant a salt of an element such as chrome, nickel, iron, titanium, tungsten, or molybdenum belonging to the transition metals, or a salt of an element such as europium or ytterbium belonging to the lanthanides. Doping takes place by immersing the film in a solution having a low dopant concentration, e.g. in toluene, and maintaining the system at low pressure and ordinary temperature for a period of a few days, as a function of the desired doping level and conductivity.


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