The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1984
Filed:
Sep. 29, 1983
Dennis P Bouldin, Essex Junction, VT (US);
Dale P Hallock, Bristol, VT (US);
Stanley Roberts, South Burlington, VT (US);
James G Ryan, Essex Junction, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A method for diffusing a conductivity determining impurity in a semiconductor substrate and making electrical contact thereto by depositing a conductive layer made of a rare earth hexaboride material containing a predetermined amount of silicon in it over a surface portion of the substrate and heating the substrate for a predetermined period of time at a predetermined temperature which is sufficient to cause boron from the hexaboride material to diffuse into the adjoining portion of the substrate to modify its conductor characteristics. At the same time a good electrical ohmic contact is established between the conductive layer and the adjoining substrate portion while the conductive layer retains its conductivity even after the outdiffusion of some of its boron into the substrate during the heat treatment. A silicon dioxide layer is also formed on the exposed surface of the silicon containing hexaboride material through the oxidation of the silicon disposed close to the exposed surfaces of the hexaboride material.