The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 06, 1984
Filed:
Dec. 08, 1982
Applicant:
Inventors:
Tadahiro Takigawa, Tokyo, JP;
Isao Sasaki, Chiba, JP;
Assignee:
Tokyo Shibaura Denki Kabushiki Kaisha, Kawasaki, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148-15 ; 29571 ; 2957 / ; 2504922 ; 357 91 ;
Abstract
An ion implantation method is provided which uses an ion implantation apparatus which is capable of focusing an ion beam into a spot having a diameter smaller than the size of a region into which ions are to be implanted. The ion dose is varied in accordance with the gate region, source and drain regions, and the field region of a semiconductor device including a transistor having short gate length and width.