The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 1984
Filed:
Feb. 17, 1984
Applicant:
Inventors:
Willy Beinvogl, Munich, DE;
Barbara Hasler, Stockdorf, DE;
Assignee:
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; B44C / ; C03C / ; C23F / ;
U.S. Cl.
CPC ...
156643 ; 156646 ; 156652 ; 156657 ; 1566591 ; 2041 / ; 252 791 ;
Abstract
A method for etching a double layer semiconductor structure containing metal silicide layers or a metal silicide-polysilicon layer on a silicon substrate through a photoresist mask by means of reactive ion etching wherein dissociation and ionization of reactant gases take place in a plasma, the improvement which comprises:
Beinvogl, Willy. (1984). Method for etching integrated semiconductor circuits containing double (U.S. Patent No. 4479850). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4479850
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile