The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 1984
Filed:
Sep. 14, 1982
Shin-ichi Akai, Itami, JP;
Sumitomo Electric Industries, Inc., Osaka, JP;
Abstract
GaAs single crystals doped with boron and having a lowered dislocation density are grown from a GaAs melt covered with B.sub.2 O.sub.3 melt as a liquid encapsulant. The method comprises using a crucible made of a material selected from the group consisting of PBN, AlN and Al.sub.2 O.sub.3 as a crucible for holding the GaAs melt, adding 0.25 to 0.95 atomic percent of boron to the GaAs melt under conditions such that the residual oxygen quantity is at most 5.times.10.sup.-2 mole percent to the GaAs melt, and thereby adjusting the concentration of boron in the grown crystal to 2.times.10.sup.18 to 1.times.10.sup.19 atoms per cm.sup.3. The method is applied to an LE-VB method and an LE-VGF method as well as an LEC method.