The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 23, 1984
Filed:
Sep. 30, 1982
Yoshihide Nagakubo, Kawasaki, JP;
Hiroshi Momose, Yokohama, JP;
Abstract
The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask pattern on a semiconductor layer through an SiO.sub.2 film; forming a thin layer on at least side surfaces of the first mask pattern; selectively forming a second mask pattern on an SiO.sub.2 film portion located between the thin layer portions formed on the side surface of the first mask pattern; selectively etching the thin layer portions formed on the at least side surfaces of the first mask pattern, and the SiO.sub.2 film portions under the thin layer portions formed on the side surfaces of the first mask pattern, using the first and second mask patterns; selectively etching an exposed portion of the semiconductor layer to form a trench; and forming an element isolation region by burying an insulating material in the trench.