The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 09, 1984

Filed:

Oct. 27, 1981
Applicant:
Inventor:

Wolfgang Mueller, Putzbrunn, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C / ; G11C / ;
U.S. Cl.
CPC ...
365178 ; 365174 ;
Abstract

A RAM memory cell in double polysilicon technology having improved packing density is attained by insulating neighboring active memory regions under a first polysilicon plane by ion implantation to increase the substrate doping of the surface of the semiconductor body whereby field shield insulation regions are generated by a transistor in the off-state and the memory regions are rendered self-conducting by the ion implantation so that with a voltage at the polysilicon-1-electrode of 0 volts, the full operating voltage can be written into the memory capacitor.


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