The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 09, 1984
Filed:
Apr. 30, 1982
Applicant:
Inventors:
Susumu Iesaka, Tokyo, JP;
Shigenori Yakushizi, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; B05D / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
427 531 ; 156657 ; 156662 ; 427 93 ; 4271262 ; 427380 ;
Abstract
A method of manufacturing a glass passivation semiconductor device by depositing a glass passivation layer on the surface of a semiconductor junction formed on a semiconductor substrate. First laser beams which can be substantially absorbed in the glass protective material and second laser beams which can be absorbed in the semiconductor substrate are simultaneously irradiated on those portions of the semiconductor substrate on which the glass protective material is deposited, thereby providing a glass passivation layer.