The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1984
Filed:
Jun. 24, 1982
Applicant:
Inventor:
Michel J Binet, Creteil, FR;
Assignee:
U.S. Philips Corporation, New York, NY (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 51 ; 357 55 ; 427 79 ; 427 96 ; 204 / ; 156657 ; 361275 ; 361304 ;
Abstract
The invention relates to a method suitable for raising the breakdown voltage of a capacitor of the integrated circuit type formed on a semiconductor substrate and characterized in that the lower plate of the capacitor is under etched so that an air wedge is obtained. As a result of the air wedge, the electric current passed through the semiconductor material is lengthened and the breakdown phenomena at the edges of the capacitor are reduced. The invention also relates to capacitors obtained in this manner.
Quick Actions:
Binet, Michel. (1984). Method of raising the breakdown voltage of an integrated capacitor and (U.S. Patent No. 4475120). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4475120
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