The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1984
Filed:
Jul. 28, 1983
John W Peters, Malibu, CA (US);
Hughes Aircraft Company, El Segundo, CA (US);
Abstract
The specification discloses a low-temperature, charge-free process for forming a layer of a native oxide on the surface of a substrate of a chosen semiconductor material. The substrate is exposed to neutral, charge-free oxygen atoms that are the primary oxidizing species and are formed in a manner which eliminates the generation of charged particles or high energy radiation. These oxygen atoms then react with the surface of the substrate to form the native oxide thereof. The use of neutral oxygen atoms avoids damage to the substrate due to exposure to charged particles or high energy radiation, both in the manner in which the oxidizing species is formed and in the manner in which the native oxide layer is grown. In a preferred embodiment, the neutral oxygen atoms are formed by exposing a chosen oxygen-containing precursor to radiation of a selected wavelength to cause the direct dissociation of the precursor to generate oxygen solely in atomic form.