The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 02, 1984
Filed:
Jan. 03, 1984
Makotao Yano, Kurashiki, JP;
Michihiro Nakamura, Soja, JP;
Kuraray Co., Ltd., Kurashiki, JP;
Abstract
A gas sensor with its photosensitivity allayed in which a hydrogen ion sensitive FET transducer having the structure of a gate-insulated field effect transistor and an Ag-AgCl reference electrode are housed inside a flexible tube in such a way that the gate part of said FET transducer and the reference electrode are located at the front end opening of the tube or an opening provided in the side wall of the tube; while the lead wires connected to the FET transducer and the reference electrode are extended along the tube, this tube is closed by filling an electrical insulation resin at least in the space of the part inside the tube wall housing the parts connecting the lead wires to the aforementioned FET transducer and to the reference electrode; further, a hydrophilic polymer containing an electrolyte is put around at least the gate part of said FET and part of the reference electrode, to envelop both of them; and whole of the surface of the aforementioned hydrophilic polymer and that of at least the part of the insulator tube housing the FET transducer are coated with a gas permeable membrane formed of a colored silicone rubber with a low optical transmittance.