The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Jun. 30, 1982
Applicant:
Inventors:
Linda M Ephrath, Danbury, CT (US);
Victor J Silvestri, Hopewell Junction, NY (US);
Denny D Tang, Pleasantville, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
427 86 ; 2957 / ; 156612 ; 156643 ; 427 93 ; 427 94 ; 427 95 ; 4271264 ;
Abstract
Isolation regions in a semiconductor substrate are formed by covering at least one of the surfaces within a trench within the substrate with non-nucleating material, providing a layer of nucleating material on at least one surface of the non-nucleating material and then filling the trench with polycrystalline silicon or epitaxial silicon or both.
Ephrath, Linda. (1984). Method of filling trenches with silicon and structures (U.S. Patent No. 4473598). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4473598
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile