The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Jun. 18, 1982
Applicant:
Inventors:
Martin A Bosch, Lincroft, NJ (US);
Ross A Lemons, Tinton Falls, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B / ;
U.S. Cl.
CPC ...
156620 ; 156D / ; 156D / ; 156D / ; 156D / ; 427 531 ; 148-15 ;
Abstract
Well-oriented device quality silicon is formed on a dielectric material through a specific melting procedure. In this procedure, a body including polycrystalline or amorphous silicon overlying a dielectric is heated to a temperature close to the melting point of silicon. A narrow region of the amorphous or polycrystalline silicon whose length is substantially longer than its width is then melted using an energy source such as a laser. This long, narrow region is propagated through the amorphous or polycrystalline silicon to produce the desired device quality material.