The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 25, 1984
Filed:
Nov. 19, 1980
Applicant:
Inventors:
Robert S Green, Richardson, TX (US);
Harold W Dozier, Carrollton, TX (US);
Vernon D McKenny, Carrollton, TX (US);
Assignee:
Mostek Corporation, Carrollton, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 148-15 ; 148187 ; 357 91 ;
Abstract
An integrated circuit using MOSFETs having varying threshold voltages permitting improved performance and reduced area utilization on a monolithic semiconductor chip is produced by selectively varying ion implantation doses in the channels of the MOSFETs. By repeated masking and implanting steps, selected MOSFETs are implanted with differing doses of ions and combinations of doses, thereby forming circuit portions with MOSFETs having threshold voltages tailored to optimize different characteristics associated with different circuit portions.