The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1984
Filed:
Oct. 24, 1983
Applicant:
Inventor:
Albert W Fisher, Hunterdon, NJ (US);
Assignee:
RCA Corporation, New York, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
427 93 ; 2557 / ; 1566591 ; 156662 ; 156653 ; 156657 ; 427 94 ;
Abstract
The formation of silicon dioxide isolated silicon islands on the surface of a substrate is improved by utilizing as an oxidation mask a patterned layer of silicon nitride which is deposited by LPCVD directly onto the surface of the silicon wafer. The subject method substantially reduces the incidence of stress related defects in the silicon surface and therefore eliminates the need for a layer of pad oxide which, if present, would cause 'bird's beak' formation.
Fisher, Albert. (1984). Local oxidation of silicon substrate using lpcvd silicon nitride (U.S. Patent No. 4472459). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4472459
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile