The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1984
Filed:
Nov. 18, 1982
Rajiv R Shah, Plano, TX (US);
Texas Instruments Incorporated, Dallas, TX (US);
Abstract
A method for selectively heating an insulating layer on a semiconductor structure by a high energy transient radiation source to a temperature sufficient to cause reflow without any significant heating of the regions adjacent to or underlying the insulating layer. In one embodiment a laser tuned to the absorption wavelength of the insulating material is scanned over the surface of the semiconductor structure. In another embodiment an insulating layer and an underlying or adjacent semiconductor layer are concurrently heated by a laser tuned to an absorption wavelength common to both in order to maintain the integrity of the interface therebetween. In a further embodiment the depth of heating in an insulating layer is controlled by selecting an appropriate dwell time for a continuous wave laser and a pulse duration for a pulsed laser.