The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 18, 1984
Filed:
Mar. 18, 1982
Yoshitaka Sasaki, Yokohama, JP;
Abstract
Disclosed is a method for manufacturing a semiconductor device of high reliability, high performance and high integration with high yield. The method of this invention has the steps of forming at least one groove in a semiconductor substrate, forming a non-single-crystalline semiconductor film to cover an entire surface of the semiconductor substrate including an inner surface of the groove, selectively etching the non-single-crystalline semiconductor film so as to leave the non-single-crystalline semiconductor film on at least a side wall of the groove, and forming an oxide isolation layer in the groove by thermal oxidation.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile