The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 11, 1984

Filed:

Oct. 27, 1981
Applicant:
Inventors:

Ziba T Dearden, Manassas, VA (US);

Yogishwar K Puri, Vienna, VA (US);

William W Sproul, III, Reston, VA (US);

Assignee:

IBM Corporation, Armonk, NY (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G06F / ; G06F / ;
U.S. Cl.
CPC ...
364786 ; 364784 ;
Abstract

A digital adder circuit is disclosed which employs non-DC current configurations to significantly reduce power, device count, and delay in performing binary addition. The circuit features a carry propagate transfer FET device whose gate is controlled by a carry propagate control circuit which selectively gates on the transfer FET device at a particular adder bit stage when the carry-in binary bit is to be transferred as the carry-out binary bit, which takes place when the augend input bit and addend input bit at that stage are not equal. The circuit additionally features a carry generate control circuit which is connected to the carry-out node of the FET transfer device, which selectively connects that node to either a drain potential when both inputs are unity or to ground potential when both inputs are zero, thereby efficiently generating the carry-out bit without regard for the state of the carry-in bit. When the input bits are not equal, the carry generate control circuit has a high impedance state so that it will not affect the propagation of the carry-in bit through the FET transfer device. The resultant adder circuit has a reduced power dissipation, a reduced signal delay, and a reduced device count when compared with prior art FET adder circuits.


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