The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 1984
Filed:
Dec. 04, 1981
Applicant:
Inventors:
Chung Y Chen, Scotch Plains, NJ (US);
Alfred Y Cho, Summit, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 15 ; 357 16 ;
Abstract
A thin and highly doped Ga.sub.0.47 In.sub.0.53 As layer disposed on a Ga.sub.0.47 In.sub.0.53 As layer increases the barrier height and produces useful device characteristics. For example, the structure may be used as the gate electrode in an InGaAs field effect transistor.