The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 11, 1984
Filed:
Mar. 01, 1982
Daniel Delagebeaudeuf, Paris, FR;
Tranc L Nuyen, Paris, FR;
Thomson-CSF, Paris, FR;
Abstract
There is disclosed a heterojunction field effect transistor with an accumulation of majority carriers functioning as a high cut-off frequency device in which the transistor uses the properties of the same type GaAs/Al.sub.x Ga.sub.1-x As N-doped junctions with the GaAs being weakly doped. This is used to produce a high mobility of charges in the accumulation layer and is effected by a structure in which the source and drain regions are partially covered by the gate region which is in turn covered by an insulation layer and thereby reduces the access resistances and increases the transition frequencies.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile