The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 04, 1984

Filed:

Jun. 22, 1983
Applicant:
Inventors:

Robert M Wade, Wabash, IN (US);

George N Benjamin, Stamford, CT (US);

Marwick H Solomon, Marion, IN (US);

Daniel H Jessop, Middletown, IN (US);

Assignee:

Anaconda-Ericsson, Inc., Malvern, PA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01B / ;
U.S. Cl.
CPC ...
156 51 ; 156298 ; 1741 / ; 174115 ; 1741 / ; 427120 ; 428383 ;
Abstract

An improved multilayer electric cable is disclosed having a conductive core, an extruded strand shield (ESS) layer, an insulating layer of polymeric insulation material surrounding the core and coaxial therewith, a semiconductive insulation shield (EIS) layer strippably bonded to the insulation layer surrounding it and coaxial therewith and, preferably, a plurality of axially extending drain wires disposed within the semiconductive EIS layer. The semiconductive EIS layer is formed of a copolymer of an ethylene/acrylate/monoalkyl ester of 1,4-butenedioic acid copolymer, conductive carbon black, a peroxide curing agent and polyethylene or polyethylene copolymer. The semiconductive EIS layer is applied by extrusion at elevated temperature in a dry gas atmosphere. Such dry processing conditions are sufficiently severe that the copolymer of ethylene/acrylate/ester can reliably serve as a suitable basis for the semiconductive EIS layer, since other conventional semiconductive compositions are susceptible to being adversely affected by the severe conditions of dry processing.


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