The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 1984
Filed:
Dec. 14, 1981
Herman H Wieder, San Diego, CA (US);
Arthur R Clawson, San Diego, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US);
Abstract
An apparatus for and a method of making heterojunction source-drain insulated gate field-effect transistors in order to obtain higher gain-bandwidth products at microwave frequencies. A semi-insulating InP semiconductor substrate is provided with a ternary alloy layer of p-type Ga.sub.0.47 In.sub.0.53 As, or optionally, an acceptor-doped p-type bulk of Ga.sub.0.47 In.sub.0.53 As can be substituted. Troughs are shaped in the substrate and layer for receiving a material lattice-matched to the n.sup.+ p-type Ga.sub.0.47 In.sub.0.53 As to perform as the source and drain contacts, n.sup.+ doped InP might be a suitable material. An optional method for forming the contacts calls for directing a stream of phosphine and hydrogen onto source and drain contact windows contacting the Ga.sub.0.47 In.sub.0.53 As which is heated to 750.degree. C. for about 15 minutes. This creates graded heterojunction source and drain contacts having a lattice-matching variable composition.