The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1984
Filed:
Nov. 13, 1981
Bruce Rosenthal, Sunnyvale, CA (US);
Intersil, Inc., Cupertino, CA (US);
Abstract
An improved field terminating structure for a semiconductor device provides a well defined voltage gradient in the vicinity of a p-n junction to reduce the electric field near the junction and increase the junction breakdown voltage. The structure includes one or more MOS-type field effect transistors operably connected to one of the regions of the junction. A portion of the potential difference applied across the junction corresponding to the threshold voltage of each transistor is distributed across the surface of the device near the junction.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile