The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 28, 1984
Filed:
Feb. 07, 1983
Applicant:
Inventors:
Jai P Bansal, Manassas, VA (US);
Claude L Bertin, S. Burlington, VT (US);
Ronald R Troutman, Essex Junction, VT (US);
Assignee:
IBM Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ; 2957 / ; 2957 / ; 148187 ; 148188 ;
Abstract
A method is disclosed for fabricating series and/or parallel connected P channel and N channel FET device topologically connected in a CMOS configuration, where the individual FET devices share a common gate sandwiched between them, forming a five terminal device. A new device structure and complementary MOSFET circuitry is also disclosed. The disclosed process produces devices and circuits which overcome the main disadvantage of prior art CMOS transistors, namely excessive area consumption and parasitic effects.