The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1984
Filed:
Jul. 15, 1982
Helmut Herberg, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
The invention relates to a thyristor with a multi-layer semiconductor body with a pnpn layer sequence which has two boundary surfaces which lie essentially parallel to the pn-junctions between the individual layers. The thyristor has a doubly slanted edge (or dove-tail profile) which can be produced without mechanical work steps. To this end, such boundary surfaces are oriented in the {100} direction and are rectangularly configured and also have lateral limits which proceed parallel to the {100} orientation direction. Respective pairs of lateral surfaces in the {111} orientation direction are obtained by means of an etching process which extend from mutually corresponding, lateral limits of both boundary surfaces. These pairs of lateral surfaces meet in a plane situated between the boundary surfaces and in which the semiconductor body exhibits a minimum cross-sectional surface. The area of employment comprises power thyristors.