The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1984
Filed:
Dec. 16, 1983
Duane E Bacon, Lee's Summit, MO (US);
Spencer S Hecox, Raytown, MO (US);
AT&T Technologies, Inc., New York, NY (US);
Abstract
An article, such as a semiconductor wafer (31), is selectively electrolytically plated to form metal deposits, such as contacts (26), adjacent to anodes of diode regions within such wafer by mounting the wafer in a plating chamber (36) opposite first and second electrodes (61 and 62), filling the chamber (36) with a metal plating electrolyte (49) and applying alternatingly plating pulses between the wafer (31) and the first electrode (61) and deplating pulses between the wafer (31) and the second electrode (62). The plating pulses are current controlled yielding a predetermined total plating current. The deplating pulses are voltage controlled yielding a deplating current which tends to subside in the course of the plating operation. The electrolyte in the chamber is agitated by streams of electrolyte pumped at a comparatively high rate toward the wafer (31) to break down surface layers of electrolyte adjacent to the wafer.