The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 21, 1984
Filed:
Dec. 28, 1981
Applicant:
Inventors:
Henry M Darley, Plano, TX (US);
Theodore W Houston, Richardson, TX (US);
Assignee:
Texas Instruments Incorporated, Dallas, TX (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
29571 ; 2957 / ;
Abstract
MESFET devices are fabricated on a semiconductor substrate using a LOCOS (localized oxidation of silicon) process twice during the fabrication. The first LOCOS process provides device separation with a self-aligned thick-field oxide (SATO). The second LOCOS provides separation of gate and source/drain regions for each device, and self-aligns the gate contact with the channel implant. Devices fabricated by this method exhibit reduced series resistance, and improved metal step coverage.