The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 1984

Filed:

Apr. 07, 1983
Applicant:
Inventor:

Jaime M Reyes, Birmingham, MI (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
136225 ; 29573 ; 136201 ; 136211 ; 136212 ; 136224 ;
Abstract

A new and improved thermoelectric device of the type which provides electrical energy in response to a temperature gradient applied across the device exhibits both structural integrity and improved efficiency. The new thermoelectric device includes a plurality of thermoelectric elements, coupling means on opposite respective sides of the thermoelectric elements for interconnecting the elements electrically in accordance with a predetermined pattern, and encapsulant means including an encapsulant material covering the exposed surfaces of the thermoelectric elements. The encapsulant forms void spaces between the elements for providing effective thermal insulation between the elements and confining substantially all of the heat flow from the temperature gradient to through the elements. The coupling means includes electrically conductive plate segments for electrically interconnecting the thermoelectric elements. The plate segments are joined to the elements on respective opposite sides thereof and are contacted and held in fixed relative relation by the encapsulant material. The plate segments further define an outer periphery of the device and the encapsulant material bridge across the plate segments at the periphery of the device. As a result, structural device integrity is obtained while more efficient use of the temperature gradient is made.


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