The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 14, 1984

Filed:

Feb. 28, 1983
Applicant:
Inventors:

Robert B Love, Chatsworth, CA (US);

Uppala V Choudary, Chatsworth, CA (US);

Assignee:

Atlantic Richfield Company, Los Angeles, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C / ; H01L / ;
U.S. Cl.
CPC ...
2041 / ; 136260 ; 136264 ; 136265 ; 2041 / ; 204298 ;
Abstract

At least two constituent elements of a semiconductor compound are deposited in varying proportions by magnetron sputtering to produce a film having a preselected concentration gradient of the constituent elements. The film can be heat treated during or after deposition to diffuse the constituent elements within the film and enhance growth of a desired film structure. The sputtering step may be performed using a planar magnetron having a plurality of continuous magnetically enhanced sputtering cathodes extending about a common axis. Each of the cathodes includes a source structure containing at least one of the constituent elements, and provision for applying electrical power to the source structure to sputter the constituent element at a controlled rate. If one of the elements is difficult to control in the deposition process, it can be sputtered from a cathode made up of a stable alloy of the element and another constituent of the film. For example, when the semiconductor compound is CuInSe.sub.2, two of the sputtering cathodes may comprise In.sub.2 Se.sub.3 and Cu.sub.2 Se, respectively, and a third optimal cathode comprises either Cu or In.


Find Patent Forward Citations

Love, Robert. (1984). Method for forming photovoltaic cells employing multinary semiconductor (U.S. Patent No. 4465575). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4465575

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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