The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 14, 1984
Filed:
Nov. 07, 1983
Tetsu Fukano, Kanagawa, JP;
Fujitsu Limited, Kawasaki, JP;
Abstract
A method for forming an isolation region having a submicron width thereof in a semiconductor substrate includes the steps of forming a metal or a metal silicide layer on the semiconductor substrate then forming a resist layer on the metal or metal silicide layer and patterning the resist layer. The method further includes selectively etching the metal or metal silicide layer and the semiconductor substrate by the reactive ion etching process using a mixture of chlorine-containing gas and oxygen gas to form a groove in the surface portion of the semiconductor substrate located around the edge of the resist layer and forming an insulating layer in the groove.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile