The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 07, 1984

Filed:

Apr. 09, 1981
Applicant:
Inventor:

Hubert Patalong, Munich, DE;

Assignee:

Siemens Aktiengesellschaft, Berlin & Munich, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
357 38 ; 357 39 ; 357 86 ; 307305 ;
Abstract

A semiconductor component, which may be configured as a diac or triac or the like, has a semiconductor body comprising four layers of alternating conductivity type, in which an outer n-emitter carries a cathode, an outer p-emitter carries an anode, and two base layers are respectively adjacent and between the emitter layers. The anode and cathode respectively have terminals for an external circuit and a metal-insulator-semiconductor structure is disposed adjacent the n-emitter layer (p-emitter layer), the metal-insulator-semiconductor structure being provided with a gate electrode insulated from the boundary surface of the semiconductor body and representing a controllable emitter short circuit. A resistor is connected to the cathode (anode) and is connected in an external circuit in series with the cathode terminal (anode terminal). The gate electrode of the metal-insulator-semiconductor structure is connected to that terminal of the resistor which is opposite to the terminal connected to the cathode (anode).


Find Patent Forward Citations

Loading…