The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1984
Filed:
May. 26, 1982
Applicant:
Inventors:
Ralph A Logan, Morristown, NJ (US);
Won-Tien Tsang, New Providence, NJ (US);
Assignee:
AT&T Bell Laboratories, Murray Hill, NJ (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
148171 ; 148172 ; 2956 / ;
Abstract
A lateral selective area liquid phase epitaxy method useful for the fabrication of, for example, a double barrier buried heterostructure laser, is described.
Quick Actions:
Logan, Ralph. (1984). Method for selective area growth by liquid phase epitaxy (U.S. Patent No. 4464211). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/4464211
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