The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 07, 1984
Filed:
Sep. 24, 1982
Applicant:
Inventor:
Kenji Maeguchi, Yokohama, JP;
Assignee:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ; H01L / ;
U.S. Cl.
CPC ...
2957 / ; 29571 ; 2957 / ; 148-15 ; 148187 ; 357 91 ; 427 531 ;
Abstract
A method for manufacturing a semiconductor device of a type in which a semiconductor element is formed on an insulating substrate. After ions which break the regularity of the crystal lattice of a monocrystalline semiconductor layer formed on the insulating substrate are implanted to form an amorphous semiconductor layer in part of the monocrystalline semiconductor layer, and after an impurity is doped in the semiconductor layer, a single annealing process is performed to recrystallize the amorphous semiconductor layer and at the same time to activate the doped impurity.