The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 1984
Filed:
Nov. 20, 1981
Robert J McIntyre, Pointe-Claire, CA;
Paul P Webb, Beaconsfield, CA;
RCA, Inc., Ste-Anne-de-Bellevue, CA;
Abstract
An n-p-.pi.-p.sup.+ Si avalanche photodiode wherein the number of acceptors introduced into a Si body to form the p-type conductivity region has been reduced and this region extends a distance greater than about 35 micrometers into the body from the surface and wherein the n-type conductivity region extends a distance into the body such that the p-n junction is less than about 10 micrometers from the surface of the body. The method of the invention comprises introducing a reduced number of acceptors into the surface of the body, diffusing the acceptors into the body a distance greater than about 35 micrometers and forming an n-type conductivity region such that the p-n junction is less than 10 micrometers from the surface of the device. APDs of the invention exhibit a k.sub.eff of about 0.006 which is a factor of greater than 2.5 less than that of typical prior art devices.