Field effect transistor with combination schottky-junction gate

Abstract

A field effect transistor device is constituted by a semiinsulating substrate consisting of a compound semiconductor, an N type semiconductor layer formed on the substrate, a plurality of P type semiconductor gate regions aligned along a straight line and extending through the semiconductor layer to reach the substrate, source and drain electrodes disposed on the semiconductor layer on the opposite sides of the drain regions, a gate electrode having an ohmic contact with the gate regions and having a Schottky contact with the semiconductor layer interposed between the gate regions. Two gate regions on the opposite ends of the array are in contact with the boundary region of the transistor. The field effect transistor device is useful for fabricating an integrated circuit and consumes less electric power. Further it reduces dispersion in the gate pinch off voltage and can be prepared at a high yield.