The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 1984
Filed:
Jun. 10, 1982
Toyoki Kazama, Yokosuka, JP;
Michiro Shimatani, Fujisawa, JP;
Fuji Electric Company, Ltd., Kawasaki, JP;
Abstract
Disclosed is a method for removing an amorphous silicon photosensitive layer from the metallic surface (e.g., aluminum or stainless steel) of a substrate used in electrophotography. The amorphous silicon layer is removed by exposing such layer to a plasma generated in a fluorine containing atmosphere. Such a plasma provides a high etch rate for the amorphous silicon layer and an extremely high silicon-to-metal etch selectivity. Therefore, the amorphous silicon layer may be rapidly removed by etching at a high power density without risk of damaging the polished metallic surface of the electrophotographic substrate. Moreover, since the etching automatically stops when the metallic surface is reached, no end-point detection is necessary.