The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 31, 1984

Filed:

Oct. 27, 1982
Applicant:
Inventors:

Prem Nath, Rochester, MI (US);

Kevin R Hoffman, Sterling Heights, MI (US);

Timothy D Laarman, Almont, MI (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C / ;
U.S. Cl.
CPC ...
118723 ; 118718 ; 427 39 ;
Abstract

A system for introducing, confining and evacuating process gases adjacent the cathode region of glow discharge deposition apparatus, said apparatus adapted to deposit at least one layer of semiconductor material onto a substrate. The deposition apparatus includes at least one dedicated deposition chamber into which process gases are introduced for glow discharge disassociation into species. The system of the present invention includes a baffling manifold adjacent the cathode, said manifold adapted to substantially reduce areas of localized rarification and compression of process gases flowing through the plasma region for substantially preventing adjacent stagnant and rapidly moving areas of process gases from forming nonuniform flow patterns as the semiconductor layer is deposited on the surface of the substrate. The system is also adapted to expose the entire transverse width of the substrate for the deposition of semiconductor material thereunto.


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