The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 31, 1984
Filed:
Jul. 09, 1982
Ulrich Schwabe, Munich, DE;
Siemens Aktiengesellschaft, Berlin & Munich, DE;
Abstract
A method for producing integrated MOS field effect transistors, particularly complementary MOS field effect transistor circuits (CMOS-FET's) is provided wherein a metal silicide level, comprised preferably of tantalum silicide, is utilized as an additional interconnect (11). In this manner, all contact areas (9, 10, 13, 14, 15) to active (MOS) regions (6, 7) and polysilicon regions (5) for the metal silicide level (11) and also for the metal interconnect (12) are opened before the precipitation of the metal silicides. The structuring of the metal silicide level (11) is executed in such a manner that the p.sup.+ regions of the circuit remain protected during a flow-spread of an intermediate oxide (17) comprised of phosphorous glass.