The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 17, 1984
Filed:
Aug. 11, 1982
Applicant:
Inventor:
Kozo Yamagami, Hyogo, JP;
Assignee:
Mitsubishi Denki Kabushiki Kaisha, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G01L / ;
U.S. Cl.
CPC ...
73727 ; 338-4 ; 357 26 ;
Abstract
An improved semiconductor pressure sensor of the silicon diaphragm type is disclosed. The sensor includes a pressure sensor device composed of a substrate of monocrystalline silicon, a diffused resistive layer formed on one surface of the substrate and a cavity formed in the other surface to create a thin-walled area that includes the diffused resistive layer with the cavity surrounded by a thick-walled leg portion. A hermetic sealable cap covers the one surface of the sensor device. A conductive diffused region from which an electrical signal can be picked up is provided in the leg portion electrically connected to the diffused resistive layer.