The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 10, 1984
Filed:
Apr. 26, 1982
Applicant:
Inventor:
Edward J Rice, Los Gatos, CA (US);
Assignee:
Acrian, Inc., Cupertino, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 22 ; 357 13 ; 357 15 ; 357 34 ; 357 56 ;
Abstract
A mesa type transistor structure is formed by using a metal mask in a semiconductor etching process whereby the mesa structure forms beneath the metal mask with the metal mask overhanging the sidewalls of the mesa. In a subsequent metal deposition step the overhanging metal layer provides a shadow mask which prevents the deposition of metal on a doped region in the mesa structure. A base contact in a bipolar structure or a gate contact in a field effect transistor structure abuts the mesa structure to provide enhanced device characteristics without shorting to the emitter or source region.