The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 1984

Filed:

Nov. 03, 1981
Applicant:
Inventors:

Hiroshi Nozawa, Yokohama, JP;

Junichi Matsunaga, Yokohama, JP;

Naohiro Matsukawa, Yokohama, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
B05D / ; H01L / ; B44C / ; C03C / ;
U.S. Cl.
CPC ...
427 93 ; 2957 / ; 29580 ; 156643 ; 156648 ; 156657 ; 156662 ; 148187 ; 357 50 ; 427 85 ; 430313 ;
Abstract

A method for element isolation utilizing insulating materials in a semiconductor substrate is proposed. In this method an oxidizable material layer of polycrystalline silicon or the like is formed and then the oxidizable material layer is selectively oxidized, using an oxidation-proof mask thereby forming a thick oxide layer. Thereafter, the oxidation-proof mask is removed and unoxidized oxidizable material below the mask is perpendicularly etched off, leaving part of the oxidizable material which is then oxidized to form together with the thick oxide layer an element isolation. This invention further proposes a semi-conductor device having element isolation layer whose bird's beak is very small in length.


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