The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 26, 1984

Filed:

Jun. 04, 1982
Applicant:
Inventors:

Masakazu Aoki, Kodaira, JP;

Haruhisa Ando, Hachioji, JP;

Shinya Ohba, Kanagawa, JP;

Iwao Takemoto, Tokyo, JP;

Assignee:

Hitachi, Ltd., Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N / ;
U.S. Cl.
CPC ...
358213 ; 357 30 ;
Abstract

In a solid state image pick-up device of the type comprising a first semiconductor layer including a photoelectric conversion element array, and vertical and horizontal switching elements adapted to select the photoelectric conversion elements, a second semiconductor layer including a horizontal shift register for selecting the horizontal switching elements, a third semiconductor layer including a vertical shift register for selecting the vertical switching elements, the first, second and third semiconductor layers are insulated from each other, and gate voltage V.sub.SMOS.L impressed upon a gate electrode of a not selected horizontal switching element is made to satisfy a relation V.sub.SMOS.L .gtoreq.V.sub.WPD +F.sub.FB where V.sub.WPD represents a potential of the first semiconductor layer, and V.sub.FB a flat band voltage beneath gate electrodes of the horizontal switching elements.


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